Glass on Silicon technology is implemented at INPHOTEC in order to:
- Cover the full range of Photonic Integrated applications
- Extend the wavelength range from visible up to 1600nm and achieve very wide transparency range
- Guarantee very low propagation losses
INPHOTEC can process 6’’ wafers for glass on silicon integration, through LPCVD stoichiometric Ni3N4 for high contrast dielectric materials, depositions of SiO2: Ge doped and SiOxNy for low medium contrast by PECVD anneal deposition.
The choice of the waveguide material will be defined by customer design wavelength of signal and integration density.
The low edge roughness and low stress structures will be achieved through “helicon source plasma system” advanced etching system.
Upper cladding solutions for high aspect ratio structures with low stress materials are achieved by processing thick glass layer by PECVD liquid source with Semicon standard precursors.
The process capabilities available is reported in the table:
| Material | Δ RI | Waveguide Size | Curvature |
| SiO2 (Ge) | 0.7% | 4.5X4.5 µm2 | 7 mm |
| SiO2 (Ge) | 2.5% | 2.5X2.5 µm2 | 1.2 mm |
| SiON | 7% | 2.2X2.2 µm2 | 300 µm |
| Si3N4 | 35% | submicron | 7 µm |
The line can support development and medium level productions.